Industrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density

Diodes Incorporated (Diodes) (Nasdaq: DIOD) introduces the latest addition to its portfolio of Silicon Carbide (SiC) products: the DMWS120H100SM4 N-channel SiC MOSFET. This device addresses demand for higher efficiency and higher power density for applications such as industrial motor drives, solar inverters, data center and telecom power supplies, DC-DC converters, and electric vehicle (EV) battery chargers.

The DMWS120H100SM4 operates at a high voltage (1200V) and drain current (up to 37A) while maintaining low thermal conductivity (R_θJC = 0.6°C/W), making it well-suited for applications running in harsh environments. This MOSFET has a low R_DS(ON) (typical) of only 80mΩ (for a 15V gate drive) to minimize conduction losses and provide higher efficiency. In addition, the device has a gate charge of only 52nC to reduce switching losses and lower the package temperature.

This product is the first SiC MOSFET on the market in a TO247-4 package. The additional Kelvin sense pin can be connected to the source of the MOSFET to optimize the switching performance, thereby enabling even higher power densities.

The DMWS120H100SM4 is available at $21.50 in 20-piece quantities.

About Diodes Incorporated

Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor’s SmallCap 600 and Russell 3000 Index company, delivers high-quality semiconductor products to the world’s leading companies in the automotive, industrial, computing, consumer electronics, and communications markets. We leverage our expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Our broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 32 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets. For more information, visit www.diodes.com.

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